1. S.R.Gosavi, N.G. Deshpande, Y.G. Gudage, R.Sharma, Physical, optical andelectrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature, J. Alloy Compd. 2008, 48, 344-348.
2. G.B.Sakr, I.S.Yahia, M.Fadel, S.S.Fouad, M.Romcevic, Optical spectroscopy, optical conductivity,
dielectric properties and new methods for determining the gap states of CuSe thin films, J. Alloy Compd. 2010, 507, 557-562.
3..R.H. Bari, V. Ganesan, S. Potadar and L.A. Patil, Bull. Mater. Sci. Structural, optical and electrical properties of chemically deposited copper selenide films, 2009, 32, 37-42.
4. F. Yakuphanoglu, C. Viswanathan, Electrical conductivity and single oscillaot model properties of amorphous CuSe semiconductor thin film, J. Non Cryst. Solids 2007, 353, 2934 – 2937.
5. P. Peranantham, Y.L. Jeyachandran, C. Viswanathan, N.N. Praveena, P.C. Chitra, D. Mangalraj, Sa.K. Narayandass, The effect of annealing on vacuum evaporated copper selenide and indium telluride thin films, Mater. Charact. 2007, 58, 756-764.
6. H. J. Goldsmid and J. E. Giutornich, M. M. Kalia., Solar energy 24: 435 (1980).
7.K. Y. Rajpure, C. D. Lokhande and C. H. Bhosale. Mater. Chem. Phy 252:51 (1997)
8.. N. G. Patel., Solid State Electrochem. 35:1269 (1992).
9. V. L. Mathe, K. Y. Rajpure and C. H.Bhosale Bull. Mater. Sci. 22:927 (1999).