International Research journal of Management Science and Technology
ISSN 2250 - 1959 (online) ISSN 2348 - 9367 (Print) New DOI : 10.32804/IRJMST
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STUDY OF TUNNELING IN MIS INTERSECTIONS WITH SEMICONDUCTORS SUBSTRATES
1 Author(s): DR. GITA KUMARI
Vol - 9, Issue- 8 , Page(s) : 98 - 108 (2018 ) DOI : https://doi.org/10.32804/IRJMST
The last thirty years have seen an exponential improvement in the performance of computers. Faster, smaller and cheaper computers have revolutionized every aspect of life. The main driving force behind this tremendous achievement has been the shrinking of the basic building block of digital circuits, the metal-oxide semiconductor (MOS) transistor.