International Research journal of Management Science and Technology

  ISSN 2250 - 1959 (online) ISSN 2348 - 9367 (Print) New DOI : 10.32804/IRJMST

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A STUDY OF THE PROPETIES OF GALLIUM ARSENIDE USING DEEP LEVEL TRANSIENT SPECTOSCOPY, PHOTOCONDUCTIVITY, PHOTOLUMINISCENCE ETC.

    2 Author(s):  SHIVESHWAR KUMAR,VIJAY KUMAR DIKSHIT

Vol -  9, Issue- 4 ,         Page(s) : 548 - 553  (2018 ) DOI : https://doi.org/10.32804/IRJMST

Abstract

It is well known that properties of semiconductors including gallium properties including gallium arsenide are controlled by defects and impurities. The characterization of these impurities is important not only for better understanding of the solid state phenomenon but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, Photo conductivity transient photoconductivity, Photo luminescence etc. Gallium arsenide has several intrinsic impurities. The transition metal impurities are often inadvertent contaminants incorporated during device processing

1. Kaufmann U. schnlieder J. Adv. Electron – Electron physics 58 81 (1982).
2. Milnes A.G. adv. Electron- Electron Physics 61 63 (1984).
3. Kumar V and Ladebo L.A.J Appl. Physics 52 4866 (1981).
4. Kalyan Raman V. amnd Kumar V. Nuclear Physics Solid state Physis (India) c 23 154 (1980).

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